Archive for Flash Memory

Bring It On, Samsung!

A Toshiba SD Card
(Source: Ebay)

2nd place is for losers. Perhaps that’s what the good people of Toshiba Corp. felt when they decided to challenge South Korean tech giant, Samsung in the ever-growing market of flash memory production. Samsung is currently the top-dog in this market while Toshiba follows closely behind in second place.

The former will be building a flash memory plant in Yokkaichi, central Japan costing approximately USD 2.6 billion. TechWhack News reports that production of the chips should hit the road by October 2007 and 12 months later, monthly output of these cute NAND-type silicon wafers is targeted at 67,500. All this to satisfy the growing tech-appetites of customers who use these chips in devices like mobile phones, digital cameras, digital music and video players, etc.

We’ll cap this off with two words — Samsung, beware! Muahaha…

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Toshiba Incorporates Logical Block Addressing NAND

Straight from Electronic News: “Toshiba Corp. today said it has brought logical block addressing (LBA) to NAND flash memory in an effort to speed time to market, simplify design and eliminate the need for the host to handle NAND management functions.”

This new technology will benefit consumer devices such as digital audio players and personal media players. Samples of these devices are out this August.

If you haven’t the slightest clue about LBA NAND, Toshiba explained that “NAND flash memory currently uses the physical address access method that defines each physical page of a memory, from the chip to the block, to the page and down to the cell. The logical address access method of LBA assigns each cell a unique address that is not geometry dependent.”

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